Other articles related with "semiconductor device":
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  Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics
    Chin. Phys. B   2023 Vol.32 (12): 128505-128505 [Abstract] (93) [HTML 0 KB] [PDF 2070 KB] (80)
84212 Zhi-Yong Tan(谭智勇), Wen-Jian Wan(万文坚), Jun-Cheng Cao(曹俊诚)
  Research progress in terahertz quantum-cascade lasers and quantum-well photodetectors
    Chin. Phys. B   2020 Vol.29 (8): 84212-084212 [Abstract] (585) [HTML 0 KB] [PDF 836 KB] (222)
87308 Hui-De Wang(王慧德), David K Sang, Zhi-Nan Guo(郭志男), Rui Cao(曹睿), Jin-Lai Zhao(赵劲来), Muhammad Najeeb Ullah Shah, Tao-Jian Fan(范涛健), Dian-Yuan Fan(范滇元), Han Zhang(张晗)
  Black phosphorus-based field effect transistor devices for Ag ions detection
    Chin. Phys. B   2018 Vol.27 (8): 87308-087308 [Abstract] (691) [HTML 1 KB] [PDF 2698 KB] (328)
97101 Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明)
  Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
    Chin. Phys. B   2016 Vol.25 (9): 97101-097101 [Abstract] (620) [HTML 0 KB] [PDF 775 KB] (335)
177 Du Gang (杜刚), Liu Xiao-Yan (刘晓彦), Han Ru-Qi (韩汝琦)
  Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation
    Chin. Phys. B   2006 Vol.15 (1): 177-181 [Abstract] (1495) [HTML 0 KB] [PDF 271 KB] (735)
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